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每頁顯示20 條，共找到 285 條結果 <2/15>
標準編號 標準名稱 發(fā)布部門 發(fā)布日期 狀態(tài)
DIN EN 62416 (2010-12) Semiconductor Devices - Hot Carrier Test On Mos Transistors German Ins.. 2010-12-01 現(xiàn)行
NF EN 62416:2010 Semiconductor Devices - Hot Carrier Test On Mos Transistors Associatio.. 2010-11-01 現(xiàn)行
NF EN 62417:2010 Semiconductor Devices - Mobile Ion Tests For Metal-Oxide Semiconductor Field Effect Transistors (Mosfets) Associatio.. 2010-11-01 現(xiàn)行
BS EN 62416:2010 Semiconductor devices. Hot carrier test on MOS transistors British St.. 2010-07-31 現(xiàn)行
DS EN 62417:2010 Semiconductor Devices - Mobile Ion Tests For Metal-Oxide Semiconductor Field Effect Transistors (Mosfets) Danish Sta.. 2010-07-19 現(xiàn)行
BS EN 62417:2010 Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) British St.. 2010-06-30 現(xiàn)行
EIA JESD 354:1968 (R2009) The Measurement Of Transistor Equivalent Noise Voltage And Equivalent Noise Current At Frequencies Of Up To 20 Khz JEDEC Soli.. 2009-03-01 現(xiàn)行
EIA JESD 371:1970 (R2009) The Measurement Of Small-Signal Vhf-Uhf Transistor Short-Circuit Forward Current Transfer Ratio JEDEC Soli.. 2009-03-01 現(xiàn)行
EIA JESD 311:1981 (R2009) Measurement Of Transistor Noise Figure At Mf, Hf, And Vhf JEDEC Soli.. 2009-03-01 現(xiàn)行
EIA JESD 340:1967 (R2009) Standard For The Measurement Of Cre JEDEC Soli.. 2009-03-01 現(xiàn)行
EIA JESD 435:1976 (R2009) Standard For The Measurement Of Small-Signal Transistor Scattering Parameters JEDEC Soli.. 2009-03-01 現(xiàn)行
EIA JESD 353:1968 (R2009) The Measurement Of Transistor Noise Figure At Frequencies Up To 20 Khz By Sinusoidal Signal-Generator Method JEDEC Soli.. 2009-03-01 現(xiàn)行
EIA JESD 372:1970 (R2009) The Measurement Of Small-Signal Vhf-Uhf Transistor Admittance Parameters JEDEC Soli.. 2009-03-01 現(xiàn)行
NF EN 62417:2008 Mobile Ion Tests Associatio.. 2008-12-01 被替代
NF EN 62416:2008 Hot Carrier Test On Mos Transistors Associatio.. 2008-12-01 被替代
NBN EN 120003:2008 Blank Detail Specification: Phototransistors, Photodarlington Transistors, Phototransistor Arrays Belgian St.. 2008-04-24 現(xiàn)行
NBN EN 120004:2008 Blank Detail Specification: Ambient Rated Photocouplers With Phototransistor Output Belgian St.. 2008-04-24 現(xiàn)行
BS IEC 60747-4:2007 Semiconductor devices. Discrete devices. Microwave diodes and transistors British St.. 2008-02-29 現(xiàn)行
08/30177349 DC BS EN 62416. Hot carrier test on MOS transistors British St.. 2008-01-31 被替代
BS IEC 60747-9:2007 Semiconductor devices. Discrete devices. Insulated-gate bipolar transistors (IGBTs) British St.. 2007-11-30 現(xiàn)行
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