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每頁顯示20 條，共找到 285 條結果 <3/15>
標準編號 標準名稱 發(fā)布部門 發(fā)布日期 狀態(tài)
NEN IEC 60747-4:2007 Semiconductor Devices - Discrete Devices - Part 4: Microwave Diodes And Transistors Nederlands.. 2007-10-01 現(xiàn)行
NEN IEC 60747-9:2007 Semiconductor Devices - Discrete Devices - Part 9: Insulated-gate Bipolar Transistors (igbts) Nederlands.. 2007-10-01 現(xiàn)行
IEC 60747-9 Ed. 2.0 Semiconductor devices - Discrete devices Part 9: Insulated-gate bipolar transistors (IGBTs) Internatio.. 2007-09-26 現(xiàn)行
IEC 60747-4 Ed. 2.0 Semiconductor devices - Discrete devices Part 4: Microwave diodes and transistors Internatio.. 2007-08-23 現(xiàn)行
DIN IEC 62416 (2007-08) Hot Carrier Test on MOS Transistors (IEC 47/1902/CD:2007) German Ins.. 2007-08-01 被替代
07/30164950 DC IEC 60747-7. Semiconductor devices. Discrete devices. Part 7. Bipolar transistors (BTRs) British St.. 2007-04-19 廢止
07/30161967 DC BS EN 60747-8. Semiconductor devices. Discrete devices. Part 8. Field-effect transistors British St.. 2007-01-30 廢止
DIN EN 62373 (2007-01) Bias-temperature Stability Test For Metal-oxide, Semiconductor, Field-effect Transistors (mosfet) German Ins.. 2007-01-01 現(xiàn)行
KS C IEC 60747-7-1:2006 Semiconductor devices - Discrete devices - Part 7:Bipolar transistors - Section One:Blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification Korean Sta.. 2006-12-11 現(xiàn)行
KS C IEC 60747-4:2006 Semiconductor devices - Discrete devices - Part 4:Microwave diodes and transistors Korean Sta.. 2006-12-11 現(xiàn)行
KS C IEC 60747-7-2:2006 Semiconductor devices - Discrete devices - Part 7:Bipolar transistors - Section Two:Blank detail specification for case-rated bipolar transistors for low-frequency amplification Korean Sta.. 2006-12-11 現(xiàn)行
KS C IEC 60747-7:2006 Semiconductor devices - Discrete devices - Part 7:Bipolar transistors Korean Sta.. 2006-12-11 現(xiàn)行
KS C IEC 60747-7-3:2006 Semiconductor devices - Discrete devices - Part 7:Bipolar transistors - Section three:Blank detail specification for bipolar transistors for switching applications Korean Sta.. 2006-12-11 現(xiàn)行
KS C IEC 60747-7-4:2006 Semiconductor devices - Discrete devices - Part 7:Bipolar transistors - Section Four:Blank detail specification for case-rated bipolar transistors for high-frequency amplification Korean Sta.. 2006-12-11 現(xiàn)行
PN EN 62373:2006 Bias-temperature Stability Test For Metal-oxide, Semiconductor, Field-effect Transistors (mosfet) Polish Com.. 2006-10-10 現(xiàn)行
KS C IEC 60317-15:2006 Specifications for particular types of winding wires-Part 15:Polyesterimide enamelled round aluminium wire, class 180 Korean Sta.. 2006-09-18 被替代
BS IEC 60747-7-5:2005 Semiconductor devices. Discrete devices. Bipolar transistors for power switching applications British St.. 2006-01-19 被替代
KS C IEC 60317-13:2005 Specifications for particular types of winding wires-Part 13:Polyester or polyesterimide overcoated with polyamide-imide enamelled round copper wire, class 200 Korean Sta.. 2005-12-28 被替代
NEN IEC 60747-7-5:2005 Semiconductor Devices - Discrete Devices - Part 7-5: Bipolar Transistors For Power Switching Applications Nederlands.. 2005-08-01 被替代
NEN EN 120003:2005 Blank Detail Specification: Phototransistors, Photodarlington Transistors, Phototransistor Arrays Nederlands.. 2005-08-01 現(xiàn)行
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