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BIS IS 14901:Part 8:2020 Semiconductor Devices — Discrete Devices Part 8 Field-Effect Transistors ( Second Revision ) Bureau of .. 2020-03-08 現(xiàn)行
IEC 60747-7:2010/AMD1:2019 Amendment 1 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors Internatio.. 2020-03-08 現(xiàn)行
IEC 60747-7:2010 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors Internatio.. 2020-03-08 現(xiàn)行
BIS IS 14901:Part 7:2020 Semiconductor Devices — Discrete Devices Part 7 Bipolar Transistors ( First Revision ) Bureau of .. 2020-03-08 現(xiàn)行
IEC 60747-7 Ed. 3.0 Semiconductor devices - Discrete devices Part 7: Bipolar transistors （IEC 60747-7:2010 ） Internatio.. 2020-03-08 現(xiàn)行
BIS IS 14901-7:2010 Semiconductor Devices - Discrete Devices And Integrated Circuits - Part 7: Bipolar Transistors Bureau of .. 2020-03-08 被替代
BIS IS 14901-7:2001 Semiconductor Devices - Discrete Devices And Integrated Circuits - Part 7: Bipolar Transistors Bureau of .. 2020-03-08 被替代
BIS IS 14901-1:2001 Semiconductor Devices - Discrete Devices And Integrated Circuits - Part 1: General Bureau of .. 2020-03-08 被替代
IEC 60747-8 Ed. 3.0 Semiconductor devices - Discrete devices Part 8: Field-effect transistors Internatio.. 2020-03-08 現(xiàn)行
ASTM F996-11(2018) Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics American S.. 2018-03-01 現(xiàn)行
KS C IEC 60747-7:2017 Semiconductor devices - Discrete devices - Part 7:Bipolar transistors Korean Sta.. 2017-05-30 廢止
KS C IEC 60747-4:2017 Semiconductor devices - Discrete devices - Part 4:Microwave diodes and transistors Korean Sta.. 2017-05-30 廢止
IEC 60747-4 Amd.1 Ed. 2.0 Amendment 1 - Semiconductor devices - Discrete devices Part 4: Microwave diodes and transistors Internatio.. 2017-01-30 現(xiàn)行
IEC 60747-4 Ed. 2.1 Semiconductor devices - Discrete devices Part 4: Microwave diodes and transistors Internatio.. 2017-01-30 現(xiàn)行
SS EN 60191-4 Ed. 2 (2014) Mechanical Standardization Of Semiconductor Devices - Part 4: Coding System And Classification Into Forms Of Package Outlines For Semiconductor Device Packages Standardis.. 2014-05-14 現(xiàn)行
BS IEC 60747-8:2010 Semiconductor devices. Discrete devices. Field-effect transistors British St.. 2011-06-30 現(xiàn)行
BS IEC 60747-7:2010 Semiconductor devices. Discrete devices. Bipolar transistors British St.. 2011-02-28 現(xiàn)行
ASTM F996-11 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics American S.. 2011-01-01 被替代
NEN IEC 60747-8:2011 Semiconductor Devices - Discrete Devices - Part 8: Field-Effect Transistors Nederlands.. 2011-01-01 現(xiàn)行
NEN IEC 60747-7:2011 Semiconductor Devices - Discrete Devices - Part 7: Bipolar Transistors Nederlands.. 2011-01-01 現(xiàn)行
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