IEC 60749-38 Ed. 1.0現(xiàn)行
Semiconductor devices - Mechanical and climatic test methods Part 38: Soft error test method for semiconductor devices with memory
出版：International Electrotechnical Committee
專家解讀視頻
This part of IEC 60749 establishes a procedure for measuring the soft error susceptibility of semiconductor devices with memory when subjected to energetic particles such as alpha radiation. Two tests are described; an accelerated test using an alpha radiation source and an (unaccelerated) real-time system test where any errors are generated under conditions of naturally occurring radiation which can be alpha or other radiation such as neutron. To completely characterize the soft error capability of an integrated circuit with memory, the device must be tested for broad high energy spectrum and thermal neutrons using additional test methods. This test method may be applied to any type of integrated circuit with memory device.
PN EN 60749-38:2008 - Identical
OVE/ONORM EN 60749-38:2008 - Identical
DIN EN 60749-38 (2008-10) - Identical
NEN EN IEC 60749-38:2008 - Identical
EN 60749-38:2008 - Identical
NF EN 60749-38:2008 - Identical
BS EN 60749-38:2008 - Identical
