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IEC 60749-2 Ed. 1.0現(xiàn)行

Semiconductor devices - Mechanical and climatic test methods Part 2: Low air pressure

出版：International Electrotechnical Committee

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基本信息
標(biāo)準(zhǔn)編號(hào)： IEC 60749-2 Ed. 1.0
發(fā)布時(shí)間：2002/4/12 0:00:00
標(biāo)準(zhǔn)類(lèi)別：Standard
出版單位：International Electrotechnical Committee
標(biāo)準(zhǔn)頁(yè)數(shù)：11
標(biāo)準(zhǔn)簡(jiǎn)介

Covers the testing of low air pressure on semiconductor devices. The test is intended primarily to determine the ability of component parts and materials to avoid voltage breakdown failures due to the reduced dielectric strength of air and other insulating materials at reduced pressures is only applicable to devices where the operating voltage exceeds 1 000 V. This test is applicable to all semiconductor devices provided they are in cavity type packages. The test is intended for military and space-related applications only. The contents of the corrigendum of August 2003 have been included in this copy.

本標(biāo)準(zhǔn)替代的舊標(biāo)準(zhǔn)

IEC 60749 Ed. 2.2

等同采用的國(guó)際標(biāo)準(zhǔn)

DIN EN 60749-2 (2003-04) - Identical

UNE EN 60749-2:2003 - Identical

CEI EN 60749-2 Ed. 1 (2004) - Identical

BS EN 60749-2:2002 - Identical

NF EN 60749-2:2002 - Identical

I.S. EN 60749-2:2002 - Identical

PN EN 60749-2:2004 - Identical

SS EN 60749-2 Ed. 1 (2003) - Identical

NEN EN IEC 60749-2:2002 - Identical

OVE/ONORM EN 60749-2:2003 - Identical