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標(biāo)準(zhǔn)編號(hào) 標(biāo)準(zhǔn)名稱 發(fā)布部門 發(fā)布日期 狀態(tài)
BS IEC 60747-4:2007 Semiconductor devices. Discrete devices. Microwave diodes and transistors British St.. 2008-02-29 現(xiàn)行
08/30177255 DC BS EN 62415. Constant current electromigration test British St.. 2008-01-30 被替代
KS C IEC 60092-305:2007 Electrical installations in ships-Part 305:Equipment-Accumulator(storage) batteries Korean Sta.. 2007-11-30 被替代
NEN IEC 60747-4:2007 Semiconductor Devices - Discrete Devices - Part 4: Microwave Diodes And Transistors Nederlands.. 2007-10-01 現(xiàn)行
IEC 60747-4 Ed. 2.0 Semiconductor devices - Discrete devices Part 4: Microwave diodes and transistors Internatio.. 2007-08-23 現(xiàn)行
07/30164554 DC BS EN 62341-5. Organic light emitting diode displays. Part 5. Environmental test methods British St.. 2007-04-05 廢止
KS C IEC 60747-2-1:2006 Semiconductor devices - Discrete devices - Part 2:Rectifier diodes - Section one:Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A Korean Sta.. 2006-12-11 現(xiàn)行
KS C IEC 60747-2:2006 Semiconductor devices - Discrete devices and integrated circuits - Part 2:Rectifier diodes Korean Sta.. 2006-12-11 現(xiàn)行
KS C IEC 60747-4:2006 Semiconductor devices - Discrete devices - Part 4:Microwave diodes and transistors Korean Sta.. 2006-12-11 現(xiàn)行
KS C IEC 60747-3:2006 Semiconductor devices - Discrete devices - Part 3:Signal (including switching) and regulator diodes Korean Sta.. 2006-12-11 現(xiàn)行
KS C IEC 60747-3-2:2006 Semiconductor devices - Discrete devices - Part 3:Signal (including switching) and regulator diodes - Section Two:Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes Korean Sta.. 2006-12-11 現(xiàn)行
KS C IEC 60747-3-1:2006 Semiconductor devices - Discrete devices - Part 3:Signal (including switching) and regulator diodes - Section one:Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes Korean Sta.. 2006-12-11 現(xiàn)行
KS C IEC 60747-2-2:2006 Semiconductor devices - Discrete devices - Part 2:Rectifier diodes - Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A Korean Sta.. 2006-12-11 現(xiàn)行
NF EN 62341-1-2:2006 Organic Light Emitting Diode (oled) Displays - Part 1-2: Terminology And Letter Symbols Associatio.. 2006-12-01 被替代
KS C IEC 61643-321:2006 Components for low - voltage surge protective devices - Part 321:Specifications for avalanche breakdown diode(ABD) Korean Sta.. 2006-11-24 現(xiàn)行
NF EN 62031:2006 Led Modules For General Lighting - Safety Specifications Associatio.. 2006-10-01 被替代
KS C IEC 61643-341:2005 Components for low-voltage surge protective devices - Part 341:Specification for thyristor surge suppressors(TSS) Korean Sta.. 2005-12-06 現(xiàn)行
JIS C 5381-341:2005 Components for low-voltage surge protective devices Part 341: Specification for thyristor surge suppressors (TSS) Japanese S.. 2005-03-20 現(xiàn)行
DIN IEC 60747-4 (2005-01) Semiconductor devices - Discrete devices Part 4: Microwave diodes and transistors (IEC 47E/265/CD:2004) German Ins.. 2005-01-01 廢止
SANS 61643-341 Ed. 1 (2004) Components For Low-voltage Surge Protective Devices - Part 341: Specification For Thyristor Surge Suppressors (tss) South Afri.. 2004-04-23 被替代
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