ASTM F1389-00廢止
Standard Test Methods for Photoluminescence Analysis of Single Crystal Silicon for III-V Impurities
出版：American Society for Testing and Materials
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基本信息
標準編號： ASTM F1389-00
發布時間：2000/6/10 0:00:00
標準類別：Standard
出版單位：American Society for Testing and Materials
標準頁數：6
標準簡介
CONTAINED IN VOL. 10.05, 2001Covers the simultaneous determination of electrically active boron, arsenic, phosphorus, and aluminum content in low-dislocation mono-crystalline silicon. The test methods can be used for samples that have majority dopant densities between approximately 5 x 10 to the power 15 and 1 x 10 to the power 11 atoms cubic cm.
