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IEC 60747-7:3.0現(xiàn)行

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors （IEC 60747-7:2010）

出版：International Electrotechnical Committee

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基本信息
標(biāo)準(zhǔn)編號(hào)： IEC 60747-7:3.0
發(fā)布時(shí)間：2010/12/16 0:00:00
標(biāo)準(zhǔn)類(lèi)別：Standard
出版單位：International Electrotechnical Committee
標(biāo)準(zhǔn)頁(yè)數(shù)：214
標(biāo)準(zhǔn)簡(jiǎn)介

IEC 60747-7:2010 Provides the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors: a) Small signal transistors (excluding switching and microwave applications); b) Linear power transistors (excluding switching, high-frequency, and microwave applications); c) High-frequency power transistors for amplifier and oscillator applications; d) Switching transistors for high speed switching and power switching applications; and e) Resistor biased transistors.

本標(biāo)準(zhǔn)替代的舊標(biāo)準(zhǔn)

IEC 60747-7-5 : 1.0

等同采用的國(guó)際標(biāo)準(zhǔn)

BIS IS 14901:Part 7:2020 -

BS IEC 60747-7 : 2010 - Identical

NEN IEC 60747-7 : 2011 - Identical

NFC 96 007 : 1989 - Identical

BS 6493-1.7(1989) : 1989 - Identical

DIN IEC 60747-7 : 1997 - Identical

BS IEC 60747-7 : 2010 - Identical

NEN IEC 60747-7 : 2011 - Identical