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Guide for The Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
出版:American Society for Testing and Materials

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基本信息
標(biāo)準(zhǔn)編號(hào): ASTM F980-92
發(fā)布時(shí)間:1992/1/1 0:00:00
標(biāo)準(zhǔn)類別:Standard
出版單位:American Society for Testing and Materials
標(biāo)準(zhǔn)頁(yè)數(shù):5
標(biāo)準(zhǔn)簡(jiǎn)介
CONTAINED IN VOL 10.04 1999Covers requirements and procedures for testing discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation.
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