IEC 62417 Ed. 1.0現行
Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
出版：International Electrotechnical Committee
專家解讀視頻
基本信息
標準編號： IEC 62417 Ed. 1.0
發布時間：2010/4/22 0:00:00
標準類別：Standard
出版單位：International Electrotechnical Committee
標準頁數：16
標準簡介
IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.
等同采用的國際標準
BS EN 62417:2010 - Identical
